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High aspect ratio patterning of hard mask materials by organic soft masks
High aspect ratio patterning of hard mask materials by organic soft masks
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机译:通过有机软掩模对硬掩模材料进行高深宽比图案化
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摘要
A method of etching a pattern into a dielectric layer is provided. An organic planarization layer having a pattern is provided atop a dielectric layer. A cyclic fluorocarbon deposition step and plasma step is performed to etch the pattern into the dielectric layer. The energy for the plasma step is kept below the etch threshold of the dielectric layer.
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