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Method of growing high-quality single layer graphene by using Cu/Ni multi-layer metalic catalyst, and graphene device using the same
Method of growing high-quality single layer graphene by using Cu/Ni multi-layer metalic catalyst, and graphene device using the same
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机译:利用Cu / Ni多层金属催化剂生长高质量单层石墨烯的方法以及使用该方法的石墨烯器件
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摘要
Disclosed are a method of growing a high-quality single layer graphene by using a Cu/Ni multi-layer metallic catalyst, and a graphene device using the same. The method controls and grows a high-quality single layer graphene by using the Cu/Ni multilayer metallic catalyst, in which a thickness of a nickel lower layer is fixed and a thickness of a copper upper layer is changed in a case where a graphene is grown by a CVD method. According to the method, it is possible to obtain a high-quality single layer graphene, and improve performance of a graphene application device by utilizing the high-quality single layer graphene and thus highly contribute to industrialization of the graphene application device.
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