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Semiconductor device including boosted voltage supply circuit for supplying boosted voltage to memory array

机译:包括用于将升压电压提供给存储器阵列的升压电压供应电路的半导体器件

摘要

To maintain constant an output voltage of a boosted voltage circuit even when a program current of a nonvolatile memory increases; in a boosted voltage circuit provided in a semiconductor device, an output voltage of a charge pump is detected by a voltage dividing circuit, and on-off control is performed on an oscillation circuit for driving the charge pump so that the detected output voltage becomes constant. Further, an output current of the charge pump is detected, and a control current according to a magnitude of the detected output current is generated. The control current is fed into or drawn from a coupling node between a plurality of series-coupled resistance elements configuring the voltage dividing circuit.
机译:即使非易失性存储器的编程电流增加,也要保持升压电路的输出电压恒定。在半导体装置所具备的升压电路中,通过分压电路来检测电荷泵的输出电压,并对用于驱动电荷泵的振荡电路进行开关控制,以使检测出的输出电压成为恒定。 。此外,检测电荷泵的输出电流,并生成根据检测到的输出电流的大小的控制电流。控制电流被馈入构成分压电路的多个串联耦合的电阻元件之间的耦合节点或从中汲取。

著录项

  • 公开/公告号US9558832B2

    专利类型

  • 公开/公告日2017-01-31

    原文格式PDF

  • 申请/专利权人 RENESAS ELECTRONICS CORPORATION;

    申请/专利号US201514957389

  • 发明设计人 KAZUAKI KATOU;

    申请日2015-12-02

  • 分类号G11C16/10;G11C5/14;G11C7/04;G11C16/04;G11C16/26;G11C16/30;

  • 国家 US

  • 入库时间 2022-08-21 13:41:48

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