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Non-volatile resistive random access memory crossbar devices with maximized memory element density and methods of forming the same
Non-volatile resistive random access memory crossbar devices with maximized memory element density and methods of forming the same
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机译:具有最大存储元件密度的非易失性电阻式随机存取存储器交叉开关装置及其形成方法
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摘要
Non-volatile resistive random access memory crossbar devices and methods of fabricating the same are provided herein. In an embodiment, a non-volatile resistive random access memory crossbar device includes a crossbar array including a bitline and a wordline. A hardmask that includes dielectric material is disposed over the bitline. The hardmask and the bitline include a first sidewall. A memory element layer and a selector layer are disposed in overlying relationship on the first sidewall of the bitline and hardmask. The memory element layer and a selector layer are further disposed between the bitline and the wordline, to form a first memory element and selector pair.
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