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LED flip chip structure and method of forming a LED flip chip structure

机译:LED倒装芯片结构和形成LED倒装芯片结构的方法

摘要

LED Flip Chip Structure and Method of Forming a LED Flip Chip Structure A LED (LED) structure has semiconductor layers, which include a p-type layer, an active layer and a layer of type n. the p-type layer has a lower surface and the n-type layer has an upper surface through which light is emitted. Parts of the p-type layer and the active layer are then corroded to expose the n-type layer. The led surface is standardized with a photoresist and copper is coated over exposed surfaces to form p and n electrodes in electrical contact with their corresponding semiconductor layers. There is a gap between the n and p electrodes. To provide mechanical support of the semiconductor layers between space, a dielectric layer is formed in space followed by filling the space with metal. The metal is standardized to form pins that substantially cover the bottom surface of the led mold, but do not come into contact with the electrodes. the substantially uniform coverage sustains the semiconductor layer during subsequent process steps. 1/1
机译:LED倒装芯片结构和形成LED倒装芯片结构的方法LED(LED)结构具有半导体层,该半导体层包括p型层,有源层和n型层。 p型层具有下表面,n型层具有上表面,通过该上表面发射光。然后,腐蚀p型层和有源层的一部分以暴露n型层。用光致抗蚀剂将引线表面标准化,并在暴露的表面上涂覆铜,以形成与相应的半导体层电接触的p和n电极。在n和p电极之间存在间隙。为了对空间之间的半导体层提供机械支撑,在空间中形成介电层,然后用金属填充该空间。金属被标准化以形成大体上覆盖引线模具的底表面但不与电极接触的销。在随后的工艺步骤中,基本均匀的覆盖使半导体层得以维持。 1/1

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