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P-n diode having a controlled heterostructure self-positioned on hgcdte for infrared imagers
P-n diode having a controlled heterostructure self-positioned on hgcdte for infrared imagers
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机译:具有可控异质结构的P-n二极管可自定位在红外成像仪的hgcdte上
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摘要
A device including at least one heterostructure p/n diode, including a substrate based on HgCdTe including for each diode: a first part having a first cadmium concentration; a concentrated part, having a second cadmium concentration, greater than the first concentration, forming a heterostructure with the first part; a p+ doped zone situated in the concentrated part and extending into the first part, forming a p/n junction with an n-doped position of the first part, or a base plate; and the concentrated part is only located in the p+ doped zone and forms a substantially constant cadmium concentration well.
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