Typically,infrared detectors require cryogenic cooling to limit dark current w hich is directly dependent on Auger generation-recombination mechanism and highly influential in Hg Cd Te-narrow band gap material.The Auger suppressed architectures have an advantage over conventional detectors allow ing operation at elevated temperatures>200 K.Architecture w ith combination of exclusion and extraction heterojunctions has been proposed to low er Auger contribution.The paper presents a new long-w ave(≈10μm)infrared Hg Cd Te architecture w ith graded gap/doping interfaces and extra barrier located in exclusion heterojunction to suppress dark current for high operating temperature conditions.Proper barrier implementation reduces dark current by more than 20 A/cm2for room temperature operation.
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