METHOD AND APPARATUS FOR FORMING SILICON DOPED GALLIUM NITRIDE (GAN) FILMS BY A CO-SPUTTERING TECHNIQUE�

摘要

Embodiments herein provide a method for forming silicon (Si) doped GaN films by a co-sputtering of Si and Gallium Arsenide (GaAs), with an argon-nitrogen gas mixture. The method includes placing Si on the GaAs. The Si and the GaAs can be placed separately. The argon-nitrogen gas mixture is passed on the GaAs. The Si doped GaN film is formed in response to interaction between the argon-nitrogen gas with the Si and the GaAs. FIG. 2