METHOD AND APPARATUS FOR FORMING SILICON DOPED GALLIUM NITRIDE (GAN) FILMS BY A CO-SPUTTERING TECHNIQUE

摘要

An apparatus (100a, 100b, 100c) and a method for forming silicon doped GaN films by a co-sputtering of Si (104b) and GaAs (104a), with an argon-nitrogen gas mixture. The method comprising: forming Si doped GaN films in response to an interaction between argon-nitrogen gas mixture with Si (104b) and GaAs (104a).