首页> 外国专利> SOLAR CELL AND A METHOD FOR PRODUCING A SOLAR CELL WITH OXIDISED INTERMEDIATE REGIONS BETWEEN POLYSILICON CONTACTS

SOLAR CELL AND A METHOD FOR PRODUCING A SOLAR CELL WITH OXIDISED INTERMEDIATE REGIONS BETWEEN POLYSILICON CONTACTS

机译:太阳能电池以及一种生产具有多晶硅触点之间的氧化中间区域的太阳能电池的方法

摘要

The invention relates to a method for producing a solar cell (1), comprising the steps of: (a) providing a silicon substrate (3); (b) producing a boundary surface dielectric layer (5) on a surface of the silicon substrate (3); (c) depositing a silicon layer (7) consisting of amorphous or polycrystalline silicon onto said boundary surface dielectric layer (5), wherein the silicon layer (7) comprises laterally adjoining p-type doped regions (9) and n-type doped regions (11); (d) oxidising the silicon layer (7) in a locally delimited manner in intermediate regions (19) between adjoining p-type doped regions (9) and n-type doped regions (11); and (e) producing p-contacts (31) in contact with the p-type doped regions (9) of the silicon layer (7), and n-contacts (33) in contact with the n-type doped regions (11) of the silicon layer (7). Said locally-delimited oxidation allows the adjoining p-type doped regions (9) and n-type doped regions (11) to be electrically separated from one another, while simultaneously obtaining a good degree of passivation.
机译:本发明涉及一种用于制造太阳能电池(1)的方法,包括以下步骤:(a)提供硅衬底(3);以及(b)在硅衬底(3)的表面上产生边界表面介电层(5); (c)在所述边界表面介电层(5)上沉积由非晶硅或多晶硅组成的硅层(7),其中所述硅层(7)包括横向邻接的p型掺杂区(9)和n型掺杂区(11); (d)在邻接的p型掺杂区(9)和n型掺杂区(11)之间的中间区(19)中以局部划界的方式氧化硅层(7); (e)产生与硅层(7)的p型掺杂区域(9)接触的p接触(31),以及与n型掺杂区域(11)接触的n接触(33)。硅层(7)的厚度。所述局部限定的氧化使得相邻的p型掺杂区域(9)和n型掺杂区域(11)彼此电隔离,同时获得良好的钝化度。

著录项

  • 公开/公告号WO2016184840A3

    专利类型

  • 公开/公告日2017-02-02

    原文格式PDF

  • 申请/专利权人 INSTITUT FÜR SOLARENERGIEFORSCHUNG GMBH;

    申请/专利号WO2016EP60989

  • 发明设计人 PEIBST ROBBY;RÖMER UDO;

    申请日2016-05-17

  • 分类号H01L31/068;H01L31/18;H01L31/0224;H01L21/316;

  • 国家 WO

  • 入库时间 2022-08-21 13:33:53

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