SILICON CARBIDE MOSFET DEVICE AND PREPARATION METHOD THEREFOR

摘要

Provided is a silicon carbide MOSFET device, comprising gate oxide layers made up of a first gate oxide layer and a second gate oxide layer, the thickness of the second gate oxide layer being greater than that of the first gate oxide layer. Arranging the gate oxide layers in two portions having different thicknesses so that the gate oxide layers are stepped effectively reduces the electric field strength of the gate oxide layers without affecting the threshold voltage and the gate control characteristics of the device, and the on-resistance of the device may be reduced by increasing the width of a JFET area. Also provided is a manufacturing method for the silicon carbide MOSFET device.