The invention relates to a semi-conductor laser diode (10) comprising a semi-conductor layer sequence (1) with an active zone (4), wherein the semi-conductor layer sequence (1) is cylindrical, a cylinder axis (z) of said semi-conductor layer sequence (1) is perpendicular to a layer plane of the semi-conductor layer sequence (1), and the semi-conductor laser diode (10) emits a beam, generated during operation, perpendicularly to the cylinder axis (z) of the semi-conductor layer sequence (1).
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