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DYNAMIC RECONDITIONING OF CHARGE TRAPPED BASED MEMORY
DYNAMIC RECONDITIONING OF CHARGE TRAPPED BASED MEMORY
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机译:基于电荷陷阱的内存的动态重构
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摘要
A storage device with a charge trapping (CT) based memory may include improved data retention (DR) performance. The CT memory may be 3D memory that uses a charge storage layer for storing charge may have unique data retention behavior. Memory blocks using a charge storage layer may be dynamically detected and reconditioned and re-programmed to improve memory characteristics, such as data retention. The reconditioning may include a dedicated erase cycle for a block that improves the data retention.
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