[Problem] To provide a vapor-phase growth device and a growth rate detection method with which the growth rate of a thin film on a substrate can be easily and accurately detected. [Solution] The vapor-phase growth device is provided with: an initial parameter setting unit which sets initial values of respective fitting parameters including a complex refractive index of a substrate, a refractive index of each thin film formed on the substrate, a growth rate of each thin film, and at least one parameter having temperature dependency; a film thickness calculation unit which calculates the film thickness of each thin film on the basis of the growth time of each thin film and the set growth rate of each thin film; a parameter selection unit which selects, as a parameter having temperature dependency, a value corresponding to the growth temperature; a reflectance meter which measures the reflectance of the substrate on which the thin films are formed; a reflectance calculation unit which calculates the reflectance of each thin film using the values of the fitting parameters; an error calculation unit which, at a plurality of times after the start of film formation of the respective thin films, calculates an error between the reflectance calculated by the reflectance calculation unit and an actual measured value of reflectance of the corresponding thin film measured by the reflectance meter; a parameter modification unit which, if the error is not less than a predetermined value, modifies at least some of the values of the parameters having temperature dependency; and a growth rate output unit which outputs the growth rate of each thin film on the basis of the values of the fitting parameters when the error is less than the predetermined value.
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