TRANSISTORS UTILIZING MAGNETIC, DIELECTRIC AND MAGNETO-ELECTRIC FILMS

摘要

A circuit implementing a magnetic tunnel junction (MTJ) device controls magnetization of the MTJ to control current through the device. The MJT device includes first and second magnetic layers separated by an insulating layer, where the first and second magnetic layers are in electrical communication with first and second terminals, respectively. A magneto-electric film is in electrical communication with a third terminal and is proximate to the second magnetic layer. By applying a signal to the magneto-electric film, the magnetization of the second magnetic layer can be selectively changed, enabling control over current through the MTJ device.