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INTEGRATION OF AIN ULTRASONIC TRANSDUCER ON A CMOS SUBSTRATE USING FUSION BONDING PROCESS
INTEGRATION OF AIN ULTRASONIC TRANSDUCER ON A CMOS SUBSTRATE USING FUSION BONDING PROCESS
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机译:利用熔合工艺将主超声传感器集成到CMOS基板上
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摘要
Provided herein is a method including bonding a first oxide layer on a handle substrate to a second oxide layer on a complementary metal oxide semiconductor ("CMOS"), wherein the fusion bonding forms a unified oxide layer including a diaphragm overlying a cavity on the CMOS. The handle substrate is removed leaving the unified oxide layer. A piezoelectric film stack is deposited over the unified oxide layer. Vias are formed in the piezoelectric film stack and the unified oxide layer. An electrical contact layer is deposited, wherein the electrical contact layer electrically connects the piezoelectric film stack to an electrode on the CMOS.
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