Embodiments relate to a red light emitting device, a method of manufacturing the red light emitting device, a light emitting device package, and a lighting device. The embodiment includes a lower electrode, a light emitting structure, an upper electrode pad, and a branch electrode. The first conductivity type semiconductor layer of a light emitting structure has at least two different thicknesses. The first conductivity type semiconductor layer may include a first region where the upper electrode pad and the branch electrode are vertically overlapped; and a second region which is located between adjacent first regions and located at an edge of the first conductive type semiconductor layer. So, current crowding can be improved.;COPYRIGHT KIPO 2016
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