p-p n-n p-p ELECTRODE TYPE LIGHT EMITTING DIODE AND n-n ELECTRODE TYPE LIGHT EMITTING DIODE

摘要

The present invention relates to a p-p electrode type light emitting diode and an n-n electrode type light emitting diode. The p-p electrode type light emitting diode according to the present invention includes an active layer, an n-type semiconductor layer and a p-type semiconductor layer formed on both sides of the active layer, respectively; The p-type semiconductor layer is divided into a first p-type region that operates as a p-type semiconductor and a second p-type region that is broken down by a negative threshold bias; When a (+) power source is applied to the first p-type region and a negative power is applied to the second p-type region, light is emitted from the active layer region between the first p-type region and the n- . Accordingly, the etching process for exposing the n-type semiconductor layer is removed, which not only increases the process efficiency, but also can fundamentally eliminate the defect problem that may be caused in the etching process.