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C- CMOS C-band CMOS Bidirectional Amplifier Using Switchable Matching Network

机译:使用可切换匹配网络的C- CMOS C波段CMOS双向放大器

摘要

In order to simplify the system, the present invention uses a CMOS 65-nm process to fabricate a time-division bi-directional amplifier and a conversion based on a common gate amplifier structure capable of changing the drain and source of the transistor Band CMOS bi-directional amplifier using a matching circuit, wherein a center transmission line is formed in a horizontal direction around first and second ports, and a second port is formed between the first port and the second port, A first port and an amplification stage, each of which is provided between the first port and the amplification stage and between the second port and the amplification stage, for converting the direction of the current corresponding to the amplification direction according to the directionality of the amplification stage, 2 conversion matching stage.;
机译:为了简化系统,本发明使用CMOS 65nm工艺来制造时分双向放大器和基于能够改变晶体管Band CMOS bi的漏极和源极的公共栅极放大器结构的转换。使用匹配电路的双向放大器,其中在第一和第二端口周围沿水平方向形成中心传输线,并且在第一端口和第二端口,第一端口和放大级之间分别形成第二端口设置在第一端口与放大级之间以及第二端口与放大级之间,用于根据放大级的方向性转换对应于放大方向的电流的方向; 2转换匹配级;

著录项

  • 公开/公告号KR101684469B1

    专利类型

  • 公开/公告日2016-12-08

    原文格式PDF

  • 申请/专利权人 연세대학교 산학협력단;

    申请/专利号KR20150046845

  • 发明设计人 민병욱;김두중;

    申请日2015-04-02

  • 分类号H03F3/62;H03F1/56;

  • 国家 KR

  • 入库时间 2022-08-21 13:28:30

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