WLP WAFER LEVEL PACKAGE WLP AND METHOD FOR FORMING THE SAME

摘要

Provided are a semiconductor device structure and a method for forming the same. The semiconductor device structure comprises a substrate and a conductive pad formed on the substrate. The semiconductor device structure comprises a protection layer formed over the conductive pad and a post-passivation interconnect (PPI) structure formed at least in the protection layer. The PPI structure is electrically connected to the conductive pad. The semiconductor device structure also comprises a first moisture-resistant layer formed over the protection layer, and the protection layer and the first moisture-resistant layer are made of different materials. The semiconductor device structure further includes an under bump metallurgy (UBM) layer formed over the first moisture-resistant layer and connected to the PPI structure.