WLP WAFER LEVEL PACKAGE WLP AND METHOD FOR FORMING THE SAME

摘要

A semiconductor device structure and a method of forming the same are provided. The semiconductor device structure includes a substrate, and a conductive pad formed on the substrate. The semiconductor device structure includes a protective layer formed over the conductive pad, and a post-passivation interconnect (PPI) structure formed at least in the protective layer. The PPI structure is electrically connected to the conductive pad. The semiconductor device structure also includes a first moisture resistant layer formed over the protective layer, wherein the protective layer and the first moisture resistant layer are made of different materials. The semiconductor device structure further includes an under bump metal (UBM) layer formed over the first moisture resistant layer and connected to the PPI structure.