The present invention relates to a mask (M) for EUV lithography comprising a substrate (7), a multilayer coating (8) designed to reflect the EUV radiation (27), a surface Facing away from the substrate 7 of the additional coating 18 designed to reflect the DUV radiation 28 and to suppress the reflection of the EUV radiation 27. The first surface area A 1 , And a second surface area A 2 formed by the first surface 18a. Such additional coating is the multilayer coating 18. The invention also relates to an EUV lithographic apparatus comprising such a mask (M), and to a method for determining the contrast ratio caused by DUV radiation (28) during imaging of the mask (M) onto a photosensitive layer.
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