VARIABLE RESISTANCE MEMORY DEVICE HAVING ORGANIC-INORGANIC HYBRID PEROVSKITE AS VARIABLE RESISTANCE LAYER AND MANUFACTURING METHOD THEREOF

摘要

Provided are a variable resistance memory device capable of realizing low manufacturing costs and flexible properties; and a manufacturing method thereof. The variable resistance memory device comprises: first and second electrodes; and a variable resistance layer having organic metal halide having a perovskite crystalline structure positioned between the first and second electrodes.;COPYRIGHT KIPO 2017