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- Resistance change memory device including organic-inorganic hybrid perovskite as resistance change layer and method for fabricating the same
- Resistance change memory device including organic-inorganic hybrid perovskite as resistance change layer and method for fabricating the same
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机译:-包括有机-无机杂化钙钛矿作为电阻变化层的电阻变化存储器件及其制造方法
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摘要
A resistance change memory element and a method of manufacturing the same are provided. The resistance change memory element has a first electrode and a second electrode. And a resistance-variable layer including an organometallic halide having a perovskite crystal structure positioned between the first electrode and the second electrode.;
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