POROGENS POROGENATED PRECURSORS AND METHODS FOR USING THE SAME TO PROVIDE POROUS ORGANOSILICA GLASS FILMS WITH LOW DIELECTRIC CONSTANTS

摘要

The present invention relates to a chemical vapor deposition method of manufacturing a porous organic silica glass film, comprising: a step of inputting one or more precursors selected from a group consisting of organic silane and organic siloxane in a vacuum chamber, and a gas reagent including porogen separate from the precursors (where the porogen is a ring-shaped hydrocarbon compound C_4 to C_14 having an unbranched structure and an unsaturation degree of 2 or less); a step of depositing a preliminary film on a base material by inducing reaction of the gas reagent by applying energy to the gas reagent in the vacuum chamber (where the preliminary film contains porogen); and a step of removing substantially all unstable organic materials from the preliminary film to retain voids, and providing a porous film with a dielectric constant less than 2.6.