POROGENS POROGENATED PRECURSORS AND METHODS FOR USING THE SAME TO PROVIDE POROUS ORGANOSILICA GLASS FILMS WITH LOW DIELECTRIC CONSTANTS

摘要

The present invention relates to a chemical vapor deposition process for producing a porous organosilica glass film, comprising the steps of: introducing into a vacuum chamber at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a gaseous reagent comprising a porogen different from the precursor (Wherein the porogen is a C ₄ to C ₁₄ cyclic hydrocarbon compound having a non-branched chain structure and an unsaturation degree of 2 or less); Depositing a preliminary film on a substrate by applying energy to a gaseous reagent in the vacuum chamber to induce a reaction of the gaseous reagent, wherein the preliminary film contains a porogen; And removing substantially all unstable organic material from the preliminary film to provide a porous film having a porosity and a dielectric constant of less than 2.6.