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SRAM SRAM CELL AND LOGIC CELL DESIGN

机译:SRAM SRAM单元和逻辑单元设计

摘要

An embodiment is an integrated circuit structure including a static random access memory (SRAM) cell and a logic cell. The SRAM cell has a first number of semiconductor fins, has a first boundary and a second boundary parallel to each other, has a third boundary and a fourth boundary parallel to each other and has a first cell height measured from the third boundary to the fourth boundary. The logic cell has a first number of semiconductor fins and the first cell height. According to the present invention, a module process development time can be reduced.
机译:一个实施例是包括静态随机存取存储器(SRAM)单元和逻辑单元的集成电路结构。 SRAM单元具有第一数量的半导体鳍,具有彼此平行的第一边界和第二边界,具有彼此平行的第三边界和第四边界,并且具有从第三边界到第四边界测量的第一单元高度。边界。逻辑单元具有第一数量的半导体鳍和第一单元高度。根据本发明,可以减少模块工艺开发时间。

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