SRAM SRAM CELL AND LOGIC CELL DESIGN

摘要

An embodiment is an integrated circuit structure including a static random access memory (SRAM) cell and a logic cell, wherein the SRAM cell has a first number of semiconductor fins, a first boundary and a second boundary parallel to each other, And a first cell height measured from a third boundary to a fourth boundary, the logic cell having a first number of semiconductor fins and a first cell height.