PREDICTING AND CONTROLLING CRITICAL DIMENSION ISSUES AND PATTERN DEFECTIVITY IN WAFERS USING INTERFEROMETRY

摘要

A system and method for predicting and controlling pattern quality data (e.g., critical dimensions and / or pattern defects) in a patterned wafer using patterned wafer geometry (PWG) measurements is disclosed. A correlation between the PWG measurement and the pattern quality data measurement can be established and the established correlation can be used to provide pattern quality data prediction for a given wafer based on geometric shape measurements obtained for a given wafer. The resulting prediction can be provided to a lithography tool and the lithography tool can use such a prediction to correct for focus errors and / or tilt errors that may occur during the lithography process.