首页> 外国专利> HIGH PERFORMANCE SENSOR BASED ON MAXIMIZATION OF SURFACE ROUGHNESS OF ORGANIC SEMICONDUCTOR THIN FILM USING CONTROL OF SURFACE ENERGY OF BUFFER LAYER

HIGH PERFORMANCE SENSOR BASED ON MAXIMIZATION OF SURFACE ROUGHNESS OF ORGANIC SEMICONDUCTOR THIN FILM USING CONTROL OF SURFACE ENERGY OF BUFFER LAYER

机译:基于缓冲层表面能量控制的基于有机半导体薄膜表面粗糙度最大化的高性能传感器

摘要

The present invention relates to a high performance sensor based on maximization of surface roughness of an organic semiconductor thin film using control of surface energy of a buffer layer, which comprises: a substrate; an activated layer formed in an upper portion of the substrate, and composed of a hydrophobic organic semiconductor; and a sensor formed between the substrate and the activated layer, and composed of a material having smaller surface energy than cohesive energy between molecules of the hydrophobic organic semiconductor to induce smaller adhesion energy between the activated layer and the substrate than the cohesive energy between the molecules of the hydrophobic organic semiconductor.;COPYRIGHT KIPO 2017
机译:本发明涉及一种通过控制缓冲层的表面能使有机半导体薄膜的表面粗糙度最大化的高性能传感器。形成于基板上部的由疏水性有机半导体构成的活化层。传感器形成在基板和活化层之间,并且由具有比疏水有机半导体分子之间的内聚能小的表面能的材料构成,以在活化层和基板之间引起比分子之间的内聚能小的粘合能的材料。疏水性有机半导体的研究。; COPYRIGHT KIPO 2017

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