Magnetic tunnel junctions, methods used during formation of magnetic tunnel junctions, and methods of forming magnetic tunnel junctions

摘要

A method used during formation of a magnetic tunnel junction includes forming a non-magnetic tunnel insulator material over the magnetic electrode material. The tunnel insulator material includes MgO and the magnetic electrode material includes Co and Fe. B is close to opposing surfaces of the tunnel insulator material and the magnetic electrode material. A B-absorbing material is formed on the sidewalls of at least one of the magnetic electrode material and the tunnel insulator material. B is absorbed into the B-absorbing material on the side from the facing surfaces in close opposition. Other embodiments are disclosed that include magnetic tunnel junctions that are independent of the fabrication method.