Methods for cyclic deposition and curing processes are described. Embodiments described herein provide a cyclic sequential deposition and curing process for filling features formed on a substrate. The features are filled to ensure electrical isolation of features of the integrated circuits formed on the substrate. The processes described herein use flowable film deposition processes that are effective in reducing voids or joints created in features formed on a substrate. However, conventional gap-filling methods using flowable films typically include dielectric materials with undesirable physical and electrical properties. Particularly, in conventional flowable films, the film density is not uniform, the film dielectric constant varies over the film thickness, the film stability is not ideal, the film refractive index is inconsistent, and the dilute hydrofluoric acid (DHF) Immunity is not ideal. Cyclic sequential deposition and curing processes address the problems described herein to produce films with higher quality and increased lifetime.
展开▼
