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SnS FORMING METHOD FOR SnS FILM AND MANUFACTURING METHOD FOR SOLAR CELL BY USING THE FORMING METHOD

机译:SnS薄膜的SnS形成方法及利用该方法制造太阳能电池的方法

摘要

The present invention relates to a method of forming a chalcogenide compound thin film suitable for a light absorbing layer of a solar cell, comprising the following steps of: preparing precursor liquid comprising an Sn precursor material and an S precursor material; applying the precursor liquid to form a precursor film; and heat-treating the precursor film, wherein the Sn precursor material and the S precursor material are in a liquid state. The present invention provides a method of forming a chalcogenide compound thin film without a sulfidation heat treatment process by using precursor materials in a liquid state, thereby providing an excellent effect of forming a high-quality SnS thin film with a process suitable for mass production at low cost. Also, by forming a light absorbing layer with a process suitable for mass production, it is possible to manufacture a chalcogenide compound thin film solar cell at low cost.
机译:本发明涉及一种适用于太阳能电池的光吸收层的硫族化物化合物薄膜的形成方法,其包括以下步骤:制备包含Sn前驱物材料和S前驱物材料的前驱物液体;施加前体液体以形成前体膜; Sn前驱体材料和S前驱体材料为液态。本发明提供了一种通过使用液态的前体材料而无需硫化热处理工艺来形成硫属化物化合物薄膜的方法,从而提供了一种适合于大规模生产的形成高质量SnS薄膜的优异效果。低成本。另外,通过以适于大量生产的工艺形成光吸收层,可以以低成本制造硫族化物化合物薄膜太阳能电池。

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