It is three-dimensional array of read / write (R / W) a memory element is formed over a plurality of positions of the different distances on a semiconductor substrate layer plane. To operate the R / W device into a low current and a high resistance state is preferred. Resistance of these resistive state is determined in advance by the process described and depend on the dimensions of the R / W device. R / W device 430 and the method for forming series of sheet 400 are electrodes, and this provides another degree of freedom for adjusting the resistance of the R / W memory element 430. The thickness of the pad electrode 400 is adjusted to a bit line 440 from word line 470, to obtain the cross-sectional reduction in the contact circuit path. This makes it possible to operate with have the R / W memory element 430 is further increased resistance, and thus a further reduced current. Pad electrode 400 is formed almost without increasing the cell size.;
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