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GaN - SELF-ALIGNED STRUCTURES AND METHODS FOR ASYMMETRIC GAN TRANSISTORS ENHANCEMENT MODE OPERATION
GaN - SELF-ALIGNED STRUCTURES AND METHODS FOR ASYMMETRIC GAN TRANSISTORS ENHANCEMENT MODE OPERATION
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机译:GaN自对准结构和非对称GAN晶体管增强模式操作的方法
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摘要
Embodiments include HEMTs (High Electron Mobility Transistors). In embodiments, the gate electrode is spaced apart from the source and drain semiconductor regions by different distances to provide a high breakdown voltage and a low on-state resistance. In embodiments, self-aligning techniques are applied to form a dielectric liner within the trenches and on the mandrel between them, which independently defines the gate length, gate-source length, and gate-drain length in a single masking operation. In embodiments, III-N HEMTs include fluorine doped semiconductor barrier layers for threshold voltage tuning and / or elevated mode operation.;
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