首页> 外国专利> APPARATUS FOR MANUFACTURING POLYSILICON WITH EXCELLENT GROUND FAULT CURRENT PREVENTION AND SILICON DUST REMOVAL EFFECTS

APPARATUS FOR MANUFACTURING POLYSILICON WITH EXCELLENT GROUND FAULT CURRENT PREVENTION AND SILICON DUST REMOVAL EFFECTS

机译:制造具有出色接地故障电流和去除硅粉尘效果的多晶硅的装置

摘要

Disclosed is an apparatus for manufacturing polysilicon with excellent ground fault current prevention and silicon dust removal effects. The apparatus for manufacturing polysilicon according to the present invention includes: a housing with an opened lower side; and a chamber comprising a base plate coupled to the lower side of the housing. A ceramic particle layer which is for preventing silicon dust generated from a manufacturing process from directly touching the base plate and is removed with the silicon dust after the manufacturing process, is located on the upper side of the base plate.
机译:公开了一种用于多晶硅的制造装置,该装置具有优异的接地故障电流防止和硅除尘效果。根据本发明的用于制造多晶硅的设备包括:壳体,该壳体具有敞开的下侧。腔室包括耦合到壳体的下侧的基板。陶瓷颗粒层位于基板的上侧,该陶瓷颗粒层用于防止制造过程中产生的硅尘直接接触基板,并且在制造过程之后被硅尘去除。

著录项

  • 公开/公告号KR101739206B1

    专利类型

  • 公开/公告日2017-05-23

    原文格式PDF

  • 申请/专利权人 OCI COMPANY LTD.;

    申请/专利号KR20150175228

  • 申请日2015-12-09

  • 分类号C01B33/027;B01J12/02;B05D1/02;B05D5;B08B3/04;C04B35/10;C04B35/14;C04B35/58;

  • 国家 KR

  • 入库时间 2022-08-21 13:25:31

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