ELECTRODEPOSITION OF COPPER IN MICROELECTRONICS WITH DIPYRIDYL-BASED LEVELERS

摘要

A semiconductor integrated circuit device, comprising: a front surface; a back surface; and a via feature, wherein the via feature includes an opening in the front surface of the substrate, A method for metallizing a via feature of a substrate. The method comprises the steps of: (a) contacting a source of copper ions and (b) an electrolytic copper deposition chemistry containing a leveler compound that is a reaction product of a dipyridyl compound and an alkylating agent; And depositing copper metal on the bottom and sidewalls of the via feature by applying an electrical current to the electrolytic deposition chemistry to yield a copper filled via feature.;