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TSV - C ADDITIVE C CAPABLE OF CHANGING MICROVIA-FILLING METHOD BY TSV COPPER PLATING AND ELECTROPLATING SOLUTION CONTAINING SAME
TSV - C ADDITIVE C CAPABLE OF CHANGING MICROVIA-FILLING METHOD BY TSV COPPER PLATING AND ELECTROPLATING SOLUTION CONTAINING SAME
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机译:通过TSV铜电镀和包含相同溶液的TSV-C可改变微孔填充方法的C添加剂C。
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摘要
The present invention relates to an additive C capable of modifying a microvia-filling method by TSV copper plating, and an electroplating solution containing the same. Said additive C comprises one polyethylene glycol or polyvinyl alcohol having a molecular weight of 200-100,000, or mixtures thereof having different molecular weights, in a mass percentage of 5%-10%; An alkylphenol polyoxyethylene ether or a fatty alcohol-polyoxyethylene ether, in an amount of 0.001%-0.5% by mass; The solvent is water. The electroplating solution comprising the additive C can be used for microvia-peeling by TSV copper plating, and the electroplating current distribution can be reasonably adjusted for a smooth transition between the conformal plating and the bottom-up plating Realizes high speed electroplating to reduce the possibility of cracks or voids in the coating, reduces the thickness of the copper layer, reduces the cost of TSV plating time and chemical mechanical polishing (CMP), and significantly improves production efficiency.;
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