首页> 外国专利> TSV - C ADDITIVE C CAPABLE OF CHANGING MICROVIA-FILLING METHOD BY TSV COPPER PLATING AND ELECTROPLATING SOLUTION CONTAINING SAME

TSV - C ADDITIVE C CAPABLE OF CHANGING MICROVIA-FILLING METHOD BY TSV COPPER PLATING AND ELECTROPLATING SOLUTION CONTAINING SAME

机译:通过TSV铜电镀和包含相同溶液的TSV-C可改变微孔填充方法的C添加剂C。

摘要

The present invention relates to an additive C capable of modifying a microvia-filling method by TSV copper plating, and an electroplating solution containing the same. Said additive C comprises one polyethylene glycol or polyvinyl alcohol having a molecular weight of 200-100,000, or mixtures thereof having different molecular weights, in a mass percentage of 5%-10%; An alkylphenol polyoxyethylene ether or a fatty alcohol-polyoxyethylene ether, in an amount of 0.001%-0.5% by mass; The solvent is water. The electroplating solution comprising the additive C can be used for microvia-peeling by TSV copper plating, and the electroplating current distribution can be reasonably adjusted for a smooth transition between the conformal plating and the bottom-up plating Realizes high speed electroplating to reduce the possibility of cracks or voids in the coating, reduces the thickness of the copper layer, reduces the cost of TSV plating time and chemical mechanical polishing (CMP), and significantly improves production efficiency.;
机译:本发明涉及能够通过TSV镀铜来改变微孔填充方法的添加剂C以及包含该添加剂的电镀液。所述添加剂C包括质量百分比为5%-10%的一种分子量为200-100,000的聚乙二醇或聚乙烯醇,或其具有不同分子量的混合物;烷基酚聚氧乙烯醚或脂肪醇-聚氧乙烯醚的含量为0.001质量%〜0.5质量%。溶剂是水。包含添加剂C的电镀液可用于通过TSV镀铜进行微孔剥皮,并且可以合理调整电镀电流分布,以在保形电镀和自底向上电镀之间实现平滑过渡实现高速电镀以减少可能性涂层中裂纹或空隙的产生,减小了铜层的厚度,降低了TSV电镀时间和化学机械抛光(CMP)的成本,并显着提高了生产效率。

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