TRANSISTOR AND ELECTRONIC DEVICE BASED ON BLACK PHOSPHORUS METHOD OF MANUFACTURING THE TRANSISTOR

摘要

A black phosphor based transistor comprises: a substrate; A source electrode and a drain electrode spaced apart from each other on the substrate; A channel layer connecting the source electrode and the drain electrode on the substrate, the channel layer including black phosphorus; And a passivation layer comprising aluminum oxide (Al2O3) on the channel layer comprising the black. Accordingly, a high-performance transistor having excellent electrical characteristics and reduced low-frequency noise can be manufactured by controlling the reaction rate of the black phosphorus.