Ga-polar The High Efficiency Ga-polar Vertical Light Emitting Diode and The Fabrication Method Of The Same

摘要

Provided are a vertical light emitting diode device and a method of fabricating the same. The vertical light emitting diode device comprises: a conductive substrate; a p-type GaN layer disposed on the conductive substrate; an active layer disposed on the GaN layer; a first n-type GaN layer disposed in the active layer; an undoped AlN layer disposed on the first n-type GaN layer; a second n-type GaN layer disposed on the AlN layer; and a contact plug bonded to the second n-type GaN layer through the p-type GaN layer, the active layer, the first n-type GaN layer, and the AlN layer. According to the present invention, a structure capable of recombination of electrons and holes in the nearest distance to enhance current injection efficiency in a vertical LED may be provided.