3 -- Metal-Interlayer-Semiconductor Structure on Source/Drain Contact for Low Temperature Fabrication with Monolithic 3D Integration Technology and Manufacturing Method

摘要

The present invention, semiconductor layers, including a dielectric layer formed between the forming the source or drain of the semiconductor element metal layer and the metal layer and the semiconductor layer and the dielectric layer on the semiconductor device, the source or drain forming the ALD (Atomic doedoe doped through Layer Deposition) process method, by controlling the doping density of the dielectric layer to control the number of times of the feed cycle of the ALD process, it is possible to provide a semiconductor device that implements the low contact resistance with only low-temperature processes.