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Brief description of a layer of gallium nitride having dislocations
Brief description of a layer of gallium nitride having dislocations
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机译:具有位错的氮化镓层的简要说明
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摘要
A method is for treating a doped gallium nitride substrate of a first conductivity type, having dislocations emerging on the side of at least one of its surfaces. The method may include: a) forming, where each dislocation emerges, a recess extending into the substrate from the at least one surface; and b) filling the recesses with doped gallium nitride of the second conductivity type.
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