Brief description of embodiments improved of a transistor in a stack of semiconductor layers - conductive superimposed

摘要

Method of implementation of a transistor in which: a) is produced on a substrate, at least one structure semiconductor - conductor formed of a stack comprising an alternation of the layer (s) (12, 12 ′, 12 ") based on at least a first state material - conductor and of the layer (s) (16, 16 ′) based on at least a second state material - different conductive material of the first semiconductor - conductor, b) is rendered amorphous with the aid of implantations, the area of the structure, the zone made of amorphous comprising one or several portions (161, 16 ′ 1) of one or more layers based on the second state material - conductor, c) is removed, the portions (161, 16 ′ 1,) by selective etching of the second state material - conductor made amorphous screw - to - the first conductive state material -