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Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa
Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa
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机译:台面具有高反射率介电涂层的半导体LED倒装芯片
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摘要
In one embodiment of the present invention, a highly reflective dielectric stack is formed on the mesa wall of a flip-chip LED. The layers of the dielectric stack are selected to maximize reflection of light incident at angles ranging from -10 to 30 degrees, relative to the substrate. The dielectric stack is comprised of alternating low refractive index and high refractive index layers. In some embodiments, the LED is a III-nitride device with a p-contact containing silver, the dielectric stack layer adjacent to the mesa wall has a low refractive index compared to GaN, and the low refractive index layers are Al 2 O 3 .
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机译:在本发明的一个实施例中,在倒装芯片LED的台面壁上形成高反射介电叠层。选择介电叠层的各层以使相对于基板以-10至30度的角度入射的光的反射最大化。介电叠层由交替的低折射率层和高折射率层组成。在一些实施例中,LED是具有包含银的p接触的III族氮化物器件,与台面壁相邻的电介质堆叠层与GaN相比具有低折射率,并且低折射率层是Al 2 O 3。
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