首页>
外国专利>
TECHNIQUE FOR FILLING HIGH ASPECT RATIO, NARROW STRUCTURES WITH MULTIPLE METAL LAYERS AND ASSOCIATED CONFIGURATIONS
TECHNIQUE FOR FILLING HIGH ASPECT RATIO, NARROW STRUCTURES WITH MULTIPLE METAL LAYERS AND ASSOCIATED CONFIGURATIONS
展开▼
机译:填充具有多个金属层和相关配置的高纵横比,窄结构的技术
展开▼
页面导航
摘要
著录项
相似文献
摘要
Embodiments of the present disclosure describe techniques for filling a high aspect ratio, narrow structure with multiple metal layers and associated configurations. In one embodiment, an apparatus includes a transistor structure comprising a semiconductor material, a dielectric material having a recess defined over the transistor structure, the recess having a height in a first direction, an electrode terminal disposed in the recess and coupled with the transistor structure, wherein a first portion of the electrode terminal comprises a first metal in direct contact with the transistor structure and a second portion of the electrode terminal comprises a second metal disposed on the first portion and wherein an interface between the first portion and the second portion is planar and extends across the recess in a second direction that is substantially perpendicular to the first direction. Other embodiments may be described and/or claimed.
展开▼