首页> 外国专利> CRYSTALLINE-SILICON SOLAR CELL, CRYSTALLINE-SILICON SOLAR-CELL MODULE, AND MANUFACTURING METHODS THEREFOR

CRYSTALLINE-SILICON SOLAR CELL, CRYSTALLINE-SILICON SOLAR-CELL MODULE, AND MANUFACTURING METHODS THEREFOR

机译:晶体硅太阳能电池,晶体硅太阳能电池模块及其制造方法

摘要

Problem to be solved is providing a crystalline silicon-based solar cell in which a plated metal electrode layer is formed on the entire back surface, while precipitation of an undesired metal, diffusion of a metal into a silicon substrate, and so on are suppressed. To solve the problem, a crystalline silicon-based solar cell according to the present invention includes a first intrinsic silicon-based thin-film (2), a p-type silicon-based thin-film (3), a first transparent electrode layer (4), and a patterned collecting electrode (11) on a first principal surface (51) of an n-type crystalline silicon substrate (1); and a second intrinsic silicon-based thin-film (7), an n-type silicon-based thin-film (8), a second transparent electrode layer (9), and a plated metal electrode (21) on a second principal surface (52) of the n-type crystalline-silicon substrate (1). On a peripheral edge of the first principal surface, an insulating region freed of a short-circuit between the first transparent electrode layer (4) and the second transparent electrode layer (9) is provided. The plated metal electrode (21) is formed on an entire region of the second transparent electrode layer (9).
机译:要解决的问题是提供一种结晶硅基太阳能电池,其中在整个背面上形成镀金属电极层,同时抑制了不希望的金属的沉淀,金属向硅基板中的扩散等。为了解决该问题,根据本发明的晶体硅基太阳能电池包括第一本征硅基薄膜(2),p型硅基薄膜(3),第一透明电极层。 (4),在n型结晶硅基板(1)的第一主面(51)上形成有图案的集电极(11)。第二主表面上的第二本征硅基薄膜(7),n型硅基薄膜(8),第二透明电极层(9)和电镀金属电极(21) (52)是n型结晶硅衬底(1)。在第一主面的周缘上,在第一透明电极层(4)与第二透明电极层(9)之间设有无短路的绝缘区域。电镀金属电极(21)形成在第二透明电极层(9)的整个区域上。

著录项

  • 公开/公告号EP3136451A4

    专利类型

  • 公开/公告日2018-01-17

    原文格式PDF

  • 申请/专利权人 KANEKA CORPORATION;

    申请/专利号EP20150785959

  • 发明设计人 UTO TOSHIHIKO;ADACHI DAISUKE;UZU HISASHI;

    申请日2015-04-09

  • 分类号H01L31/0747;H01L31/0224;

  • 国家 EP

  • 入库时间 2022-08-21 13:17:15

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