METHOD FOR ETCHING NONPOLAR FACE OF NITRIDE-BASED SEMICONDUCTOR, AND METHOD FOR DETECTING CRYSTAL DEFECT IN NONPOLAR FACE OF NITRIDE-BASED SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To detect a crystal defect in a nonpolar face of a nitride-based semiconductor more simply and conveniently.;SOLUTION: A method for etching a nonpolar face of a nitride-based semiconductor SPC comprises the steps of: first, preparing an etchant arranged by adding an additive agent comprising an oxidizing solid to a main agent comprising an alkali metal hydroxide; and subsequently, melting the etchant thus prepared and immersing the nitride-based semiconductor SPC in the molten etchant. Thus, the nonpolar face of the nitride-based semiconductor SPC is etched by chiefly anisotropic chemical etching and as such, etch pits are formed in the nonpolar face of the nitride-based semiconductor SPC, which manifests a crystal defect in the nonpolar face of the nitride-based semiconductor SPC. Therefore, the crystal defect in the nonpolar face of the nitride-based semiconductor SPC can be detected more simply and conveniently.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2018,JPO&INPIT