METHOD FOR MANUFACTURING P-TYPE DIFFUSION LAYER-ATTACHED SEMICONDUCTOR SUBSTRATE, P-TYPE DIFFUSION LAYER-ATTACHED SEMICONDUCTOR SUBSTRATE, SOLAR BATTERY ELEMENT, AND METHOD FOR MANUFACTURING SOLAR BATTERY ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide: a method for manufacturing a p-type diffusion layer-attached semiconductor substrate, and a method for manufacturing a solar battery element which enable the achievement of a high power generation efficiency without increasing the number of processes; and a solar battery element obtained thereby.SOLUTION: A method for manufacturing a p-type diffusion layer-attached semiconductor substrate comprises the steps of: applying a p-type diffusion layer-forming composition including a boron-containing compound and a dispersant onto a semiconductor substrate, thereby forming a p-type diffusion layer-forming composition layer of which the mass of the boron-containing compound per unit area is 0.001-0.1 mg/cm; performing a thermal diffusion process on the semiconductor substrate with the p-type diffusion layer-forming composition layer deposited thereon in an atmosphere of 800-1050°C in which the oxygen concentration is less than 1 vol.%; and performing a thermal oxidation process on the semiconductor substrate after the thermal diffusion process in an atmosphere in which the oxygen concentration is 1-100 vol.%.SELECTED DRAWING: None