Defect density measuring apparatus and defect density measuring program

摘要

PROBLEM TO BE SOLVED: To measure defect density regarding storage type electric field effect TFT including defects capturing carriers in a semiconductor film.SOLUTION: A defect density measurement device 1 inputs a measurement value of gate capacitance measured with a low-frequency CV method by using gate capacitance measurement value input means 11, temporarily sets a value of a parameter group related to defect density by using parameter setting means 13, and sequentially calculates a fermi level, flat band voltage, a surface potential, and the gate capacitance at a flat band condition using the temporarily set parameter group by using fermi level calculation means 15, surface potential calculation means 16, and gate capacitance calculation means 17. Then, the defect density measurement device 1 compares the measurement value of the gate capacitance with the calculation value by using gate capacitance comparison means 18. When the measurement value of the gate capacitance and the calculation value do not match, the value of the parameter group is changed by using parameter changing means 132 and the gate capacitance is re-calculated, and when both values coincide with each other, the value of the parameter group used for calculation of the calculation value is outputted as a measurement value of the defect density.