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SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

机译:半导体结构及其制造方法

摘要

PROBLEM TO BE SOLVED: To solve problems that manufacturing of a back side illuminated (BSI) image sensor requires many complicated processes and processing.;SOLUTION: A semiconductor device 100 includes: a semiconductor substrate 101 including a first side 101a and a second side 101b opposite to the first side; a radiation sensing element 101c disposed on the semiconductor substrate; an interlayer dielectric (ILD) 102 disposed over the first side of the semiconductor substrate; and a conductive pad 103 disposed in the semiconductor substrate, passing through the ILD, and configured to couple to an interconnect structure disposed on the ILD. A portion of the conductive pad is surrounded by the semiconductor substrate, and step height is formed by a surface of the portion of the conductive pad and the second side of the semiconductor substrate.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2018,JPO&INPIT
机译:解决的问题:为了解决背面照明(BSI)图像传感器的制造需要许多复杂的过程和处理的问题;解决方案:半导体器件100包括:半导体衬底101,其包括第一侧面101a和第二侧面101b。与第一面相对;辐射感测元件101c设置在半导体基板上;层间电介质(ILD)102设置在半导体衬底的第一侧上;导电焊盘103设置在半导体衬底中,穿过ILD,并被配置为耦合到设置在ILD上的互连结构。导电焊盘的一部分被半导体衬底围绕,台阶高度由导电焊盘的一部分表面和半导体衬底的第二面形成;选图:图1;版权:(C)2018 ,JPO&INPIT

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